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High‐Temperature Multilayer Ceramic Capacitors Based on 100− x (94Bi 1/2 Na 1/2 TiO 3 –6BaTiO 3 )– x K 0.5 Na 0.5 NbO 3
Author(s) -
Groh Claudia,
Kobayashi Keisuke,
Shimizu Hiroyuki,
Doshida Yutaka,
Mizuno Youichi,
Patterson Eric A.,
Rödel Jürgen
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14097
Subject(s) - materials science , ceramic capacitor , sintering , dielectric , ceramic , permittivity , capacitor , atmospheric temperature range , microstructure , electrode , fabrication , analytical chemistry (journal) , high κ dielectric , composite material , mineralogy , optoelectronics , electrical engineering , chemistry , medicine , physics , alternative medicine , pathology , chromatography , voltage , meteorology , engineering
The potential high‐temperature dielectric materials 100− x (94Bi 1/2 Na 1/2 TiO 3 –6BaTiO 3 )– x K 0.5 Na 0.5 NbO 3 with x = 12, 18, and 24 were processed as bulk samples in order to examine the reduction of sintering temperature by means of CuO as sintering aid. Due to the successful reduction of sintering temperature, low cost Ag:Pd could be used as a co‐fired electrode material for multilayer ceramic capacitors ( MLCC s). Fabrication of 8 μm thick, dense MLCC s with self‐contained, nonreactive electrodes is reported for a wide range of compositions of Bi 1/2 Na 1/2 TiO 3 –BaTiO 3 –K 0.5 Na 0.5 NbO 3 . Among the manufactured MLCC s, those with compositions x = 24 showed the most promising dielectric properties for applications where high operating temperatures are needed. The temperature‐dependence of permittivity was quite low, revealing a change of less than ±10% compared to its 150°C‐value in the range of 40°C–225°C. For samples sintered at 1000°C, an RC constant of about 300 s was obtained at 150°C. Furthermore, these x = 24 MLCC s exhibited the finest microstructures among the compositions examined; making it a suitable candidate for further miniaturization of layer thickness as required for state‐of‐the art devices.

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