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Thermoelectric Performance of Zn and Ge Co ‐Doped In 2 O 3 Fine‐Grained Ceramics by the Spark Plasma Sintering
Author(s) -
Cheng Bo,
Fang Hui,
Lan Jinle,
Liu Yong,
Lin YuanHua,
Nan CeWen
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04640.x
Subject(s) - spark plasma sintering , materials science , ceramic , thermoelectric effect , microstructure , sintering , doping , grain size , thermoelectric materials , electrical resistivity and conductivity , metallurgy , analytical chemistry (journal) , thermal conductivity , composite material , optoelectronics , chemistry , electrical engineering , physics , chromatography , thermodynamics , engineering
Zn and Ge co‐doped In 2 O 3 ‐based ceramics have been prepared by the spark plasma sintering ( SPS ) technique. Microstructure studies show that dense and fine‐grained ceramic samples can be obtained at low temperature sintered by SPS , and the grain size is about 100–300 nm. These In 2 O 3 ‐based ceramics show higher electrical conductivity (~10 3 S/cm) as compared with the pure In 2 O 3 (~50 S/cm). In addition, the samples also exhibited large power factor, especially the In 1.98 Zn 0.01 Ge 0.01 O 3 sample ~ 7.5 × 10 ‐4 W/mK 2 . The evaluated maximum ZT value is 0.20 at 973 K, which makes them promising materials to be used in thermoelectric devices.