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Influence of Cr 2 O 3 on the Residual Voltage Ratio of SnO 2 ‐Based Varistor
Author(s) -
Wei Qiaoyuan,
He Jinliang,
Hu Jun,
Wang Yunchao
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04620.x
Subject(s) - varistor , materials science , residual , microstructure , grain size , ceramic , voltage , electrical resistivity and conductivity , conductivity , composite material , analytical chemistry (journal) , electronic engineering , mineralogy , electrical engineering , chemistry , computer science , algorithm , engineering , chromatography
The SnO 2 ‐based varistor is a kind of new varistor ceramic material with high nonlinear electrical properties and high thermal conductivity. To improve the comprehensive performance, we focus on how to lower the residual voltage ratio of SnO 2 ‐based varistor. In this article, the influence of Cr 2 O 3 on the microstructure, nonlinear J–E characteristics and surge current performances have been investigated. By changing mean grain size and bringing oxygen vacancies, different Cr 2 O 3 concentrations make the residual voltage ratio increase or decrease accordingly. The lowest residual voltage ratio we obtained is 1.68, when the content of Cr 2 O 3 is 0.03 mol%, which is comparative to commercial ZnO ‐based varistor of the same specifications and close to practical use.
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