Premium
The Properties of BaSn 0.15 Ti 0.85 O 3 Thin Film Prepared by Radio Frequency Magnetron Sputtering from Powder Target
Author(s) -
Zhu Guisheng,
Yang Zupei,
Yang Huijuan,
Xu Huarui,
Yu Aibing
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03942.x
Subject(s) - materials science , dielectric , sputter deposition , ferroelectricity , thin film , sputtering , radio frequency , deposition (geology) , optoelectronics , cavity magnetron , composite material , analytical chemistry (journal) , nanotechnology , electrical engineering , paleontology , engineering , sediment , biology , chemistry , chromatography
The properties of BaSn 0.15 Ti 0.85 O 3 (BST) thin film with the thickness of 300 nm deposited from powder target using radio frequency (RF) magnetron sputtering technique is demonstrated. The deposition rate of BST film is estimated to be 40 nm/min, which is fast for ferroelectric materials. The dielectric constant of the film decreases from 10 kHz to 1 MHz with the increasing frequency, but the dielectric loss remains small (<0.02) during frequency variety. The dielectric tunability high, which is up to 59.3%, is achieved at a low voltage of 5 V. The results demonstrate that the RF magnetron sputtering from powder target is a versatile, novel technique for the deposition of high‐quality ferroelectric thin films.