Premium
Aging in Ferroelectrics
Author(s) -
Lupascu Doru C.,
Genenko Yuri A.,
Balke Nina
Publication year - 2006
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2005.00663.x
Subject(s) - clamping , grain boundary , materials science , dipole , crystallite , charge carrier , condensed matter physics , ionic bonding , charge (physics) , range (aeronautics) , chemical physics , chemistry , composite material , physics , optoelectronics , microstructure , ion , metallurgy , computer science , computer vision , organic chemistry , quantum mechanics
The reorientation of defect dipoles and the drift of free charge carriers are the most prominent microscopic mechanisms under discussion to provoke the aging effect in ferroelectrics. These two mechanisms are contrasted taking into account the influence of grain boundaries in a polycrystalline material. For the drift model, clamping pressures on domain walls only depend on geometry and on the transport properties of the mobile defect charge carrier independent of its electronic or ionic nature. For a numerical example clamping pressures as a result of drift of oxygen vacancies are determined in BaTiO 3 . They range from 10 6 to 10 7 Pa corresponding to experimental values.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom