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Thermal Decomposition of the Oxynitride of Germanium and the Heat Capacity of the Oxynitrides of Silicon and Germanium
Author(s) -
Ehlert Thomas C.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb09563.x
Subject(s) - germanium , differential scanning calorimetry , silicon oxynitride , silicon , thermal decomposition , materials science , decomposition , analytical chemistry (journal) , mass spectrometry , mineralogy , chemistry , thermodynamics , metallurgy , silicon nitride , physics , environmental chemistry , organic chemistry , chromatography
Using the mass spectrometry‐effusion cell technique, Ge 2 N 2 O has been found to decompose under equilibrium conditions according toBetween 850 and 1000 K, the free energy change for this reaction is given byThe heat capacities of Ge z N 2 O and its silicon homolog between 296 and 738 K have been determined using differential scanning calorimetry. From these results it has been found that
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