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Effect of Oxide Defect Structure on the Electrical Properties of ZrO 2
Author(s) -
KUMAR ARUN,
RAJDEV DILIP,
DOUGLASS D. L.
Publication year - 1972
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1972.tb11336.x
Subject(s) - monoclinic crystal system , cubic zirconia , materials science , ionic bonding , oxygen , ionization , ionic conductivity , conductor , oxide , electrical resistivity and conductivity , conductivity , electrical conductor , analytical chemistry (journal) , crystallography , ion , chemistry , crystal structure , ceramic , composite material , metallurgy , electrical engineering , electrode , organic chemistry , chromatography , engineering , electrolyte
The defect structure of monoclinic ZrO 2 was studied by measuring the transfer numbers and electrical conductivity as functions of O 2 pressure and temperature. The data suggest a defect structure of doubly ionized oxygen vacancies at low pressures, i.e. <10 −19 atm, and singly ionized oxygen interstitials at pressures >10 −9 atm. Zirconia is primarily an ionic conductor below #700°C and an electronic conductor at 700° to 1000°C for 10 −22 ≤P o2 ≤1 atm.
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