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This paper presents a concept of a circuit harvesting high-energy plasma and operating during its semiconductor fabrication process, namely Fetal-Movement Circuit (FMC). The plasma current collection antenna is designed to be a comb shape for area saving. This enables the FMC related circuits to be placed within a dicing street for suppressing its area penalty to be almost zero. A self-programing oxide-breakdown Physically Unclonable Function (PUF) has been implemented as one of the FMC applications. The successful PUF programing operation during fabrication has been demonstrated.

A Fetal-Movement Circuit Harvesting High-Energy Plasma During Fabrication, Concept and Its Application to Self-Programing PUF