Open AccessElectrical magnetization reversal in ferromagnetic semiconductors
Author(s) -
Fumihiro Matsukura,
Daichi Chiba,
Michihiko Yamanouchi,
Hideo Ohno
Publication year - 2004
Publication title -
intermag asia 2005. digests of the ieee international magnetics conference, 2005.
Language(s) - English
DOI - 10.1109/icmens.2004.59
The electrical current driven domain wall motion in a lithographically defined area of ferromagnetic semiconductor structures consisting of Ga/sub 0.95/Mn/sub 0.05/As/In/sub 0.15/Ga/sub 0.85/As/GaAs/GaAs(001) substrate was demonstrated in this study using magneto-optical Kerr effect (MOKE) microscope. The results of current induced magnetization reversal in magnetic tunnel junction (MTJ) nanopillars made of ferromagnetic III-V semiconductors were also investigated.
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