Open AccessEnhanced field emission properties From plasma treated Ti3C2Tx (MXene) emitters
Author(s) -
Xuda Hong,
Huibin Zheng,
Dong Liang
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abc9e0
Subject(s) - mxenes , field electron emission , plasma , materials science , nitride , carbide , analytical chemistry (journal) , electron , nanotechnology , metallurgy , layer (electronics) , chemistry , physics , quantum mechanics , chromatography
MXenes are an emerging family of 2D transition metal carbides and nitrides and have already shown potential in various applications. However, up to now, studies on the field emission application of MXenes are scarce. In this study, the field emitters based on the Ti 3 C 2 T x (MXene) flakes were prepared by facile solution process and the effect of different plasmas (H 2 , Ar, O 2 ) on the field emission properties of Ti 3 C 2 T x films was investigated. The plasma treated Ti 3 C 2 T x films showed significantly better field emission properties than that of as-deposited Ti 3 C 2 T x films. Compared to the Ar and O 2 plasma treated Ti 3 C 2 T x films, the H 2 plasma treated Ti 3 C 2 T x films displayed lower turn-on field (8.5 V/ μ m) and larger maximum current density (1222 μ A cm −2 ). The H 2 plasma treated Ti 3 C 2 T x films also showed good emission stability. These results suggested the potential of the H 2 plasma treated Ti 3 C 2 T x films as electron source of vacuum electronic devices.