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Raman scattering and photoluminescence measurements have been carried out on nano-diamonds containing Nitrogen-vacancy (NV − ), Silicon-Vacancy (SiV − ) and Germanium-vacancy (GeV − ) synthesized by high pressure and high temperature method. Optical zero-phonon-line transition of these negatively charged centres were measured from room temperature up to 600 °C under air. The results show that all nano-diamonds are stable at this temperature range and spectra are reproducible for heating and cooling cycles. Thermal behaviors of linewidth and zero phonon line, for SiV −  and GeV −  centres, are well described by the second-order electron-phonon interactions involving two-phonon and elastic processes.

Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C–600 °C)