Open AccessNumerical Study of AlN Growth in MOCVD Heated by Induction
Author(s) -
Ligen Lu,
Zhiming Li,
Lili Zhao,
Guoqiang Ren,
Li Feng
Publication year - 2019
Publication title -
iop conference series. earth and environmental science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.179
H-Index - 26
eISSN - 1755-1307
pISSN - 1755-1315
DOI - 10.1088/1755-1315/295/5/052027
Subject(s) - metalorganic vapour phase epitaxy , growth rate , materials science , chemical vapor deposition , nitride , nitrogen , chemical engineering , deposition (geology) , hydrogen , analytical chemistry (journal) , composite material , chemistry , nanotechnology , layer (electronics) , organic chemistry , paleontology , geometry , epitaxy , mathematics , sediment , engineering , biology
In this paper, the process of growing aluminum nitride(AlN) film in the metal organic chemical vapor deposition(MOCVD) reactor heated by induction was simulated, and several important factors affecting the growth rate were analyzed. The purpose of this study is to explore the relationship between these factors and the growth rate of AlN films, and to provide feasible guidance for the parameter optimization of the growth of AlN film. It was concluded that compared with the pure nitrogen(N 2 ) or hydrogen(H 2 ) as the carrier gas, the growth rate was obviously improved under the conditions of using the mixed carrier gases composed of N 2 and H 2 . In addition, the uniformity of AlN film and the growth rate can be improved with the increase of H 2 ratio. It was also found that the growth rate of the film gradually decreased with the increased temperature of the gases introduced into the reactor, but the uniformity increased. Dimer is the main growth precursor of the film. In the parasitic reaction, the trimer has the greatest influence on the film, and the concentration of the polymer is more susceptible to temperature changes.