Open AccessImproved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique
Author(s) -
Jue Liu,
J Wang,
H Wang,
Liren Zhu,
Weifeng Wu
Publication year - 2017
Publication title -
journal of physics conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/864/1/012019
Subject(s) - ohmic contact , materials science , contact resistance , optoelectronics , annealing (glass) , wafer , high electron mobility transistor , etching (microfabrication) , process window , metallurgy , composite material , electrical engineering , voltage , transistor , layer (electronics) , lithography , engineering
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