Open AccessHall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations
Author(s) -
Janusz Woźny,
Zbigniew Lisik,
Jacek Podgórski
Publication year - 2014
Publication title -
journal of physics conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/494/1/012005
Subject(s) - monte carlo method , silicon carbide , electron mobility , range (aeronautics) , statistical physics , electron , condensed matter physics , magnetic field , silicon , hall effect , computational physics , materials science , field (mathematics) , physics , engineering physics , nuclear physics , mathematics , quantum mechanics , optoelectronics , pure mathematics , composite material , metallurgy , statistics
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