Open AccessAnalysis of the IGBT Module with Bonding Wire Failure Based on Transient Thermal Impedance
Author(s) -
Gao J,
Zhirui Lv,
Long Yi,
Ping Song,
Zhao Yuan,
Guoqing Xu,
Minxiang Yang
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2276/1/012033
Subject(s) - insulated gate bipolar transistor , transient (computer programming) , materials science , electrical impedance , reliability (semiconductor) , thermal resistance , wire bonding , thermal , gate driver , power semiconductor device , transistor , power (physics) , electronic engineering , electrical engineering , optoelectronics , voltage , computer science , engineering , chip , physics , quantum mechanics , meteorology , operating system