Open AccessGO Replaces PEDOT:PSS as the Hole Injection Layer of Quantum Dot Light-Emitting Diodes
Author(s) -
Zhenzhen Yan,
Yubao Zhang,
Qin Zhang,
Juan Sun,
Zhangwang Xu,
Lei Ding,
Xia Hai
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2168/1/012020
Subject(s) - pedot:pss , graphene , optoelectronics , materials science , quantum dot , anode , ultraviolet , oxide , diode , photoelectric effect , layer (electronics) , luminance , irradiation , light emitting diode , nanotechnology , optics , electrode , chemistry , physics , nuclear physics , metallurgy
In this paper, graphene oxide is used instead of poly (3,4-ethylenedioxythiophene): poly (phenylethylenesulfonic acid) PEDOT:PSS as the hole injection layer of quantum dot light-emitting diodes. The experimental results prove that graphene oxide irradiated with ultraviolet for an appropriate time can improve the performance of the device. Compared with traditional devices, the luminance is increased by 1.9 times and current efficiency of the device is increased 2.4 times. In addition, the turn-on voltage was reduced from 2.8 V to 2.4 V. The improvement of these photoelectric properties is mainly due to the fact that graphene oxide after ultraviolet irradiation can form a good energy level structure with the anode and the hole transport layer, which is more conducive to hole injection.