Open AccessInfluence of high temperature reliability test of 1200V SiC MOSFET on static parameters
Author(s) -
Peifei Wu,
Guangfu Tang,
Fei Yang,
Zechen Du,
Yu Du,
Junmin Wu
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2033/1/012096
Subject(s) - materials science , mosfet , reliability (semiconductor) , optoelectronics , gate oxide , silicon carbide , threshold voltage , leakage (economics) , electrical engineering , voltage , composite material , transistor , engineering , physics , power (physics) , quantum mechanics , economics , macroeconomics