Open AccessStudy of silicon surface layers modified by hydrogen plasma immersion ion implantation and oxidation
Author(s) -
A. Szekeres,
S. Alexandrova,
Penka Terziyska,
Mihai Anastasescu,
M. Stoica,
M. Gärtner
Publication year - 2020
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1492/1/012056
Subject(s) - plasma immersion ion implantation , materials science , ion , hydrogen , silicon , analytical chemistry (journal) , oxide , stoichiometry , plasma , ellipsometry , ion implantation , oxygen , chemistry , thin film , nanotechnology , optoelectronics , metallurgy , physics , organic chemistry , chromatography , quantum mechanics
We report a study of p-Si(100) surface layers modified by plasma immersion ion implantation (PIII) and dry oxidation. This is expected to allow one to engineer near-surface layers with different thicknesses and levels of amorphization. Hydrogen ions were introduced into a shallow near-surface Si region through PIII with energy of 2 keV and doses ranging from 10 13 ion/cm 2 to 10 15 ion/cm 2 . The implanted Si surface was subjected to oxidation in dry oxygen atmosphere at temperatures ranging from 700 °C to 800 °C. The optical and structural properties of the modified Si layers were studied in detail by spectroscopic ellipsometry (SE) in the IR spectral range of 300 – 4000 cm −1 . The surface morphology was examined by atomic force microscopy (AFM) imaging at different scales and by fractal analysis. Through decomposition of the main Si-O bands into Gaussian peaks, different Si oxidation states were identified, suggesting non-stoichiometric oxide layer composition.