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The interplay between the illuminated excitation of carriers and subsequentthermalization and recombination leads to the formation of non-equilibriumdistributions for the "hot" carriers and to heating of both electrons, holesand phonons. In spite of the fundamental and practical importance of theseprocesses, there is no theoretical framework which encompasses all of them andprovides a clear prediction for the non-equilibrium carrier distributions.Here, a self-consistent theory accounting for the interplay between excitation,thermalization, and recombination in continuously-illuminated semiconductors ispresented, enabling the calculation of non-equilibrium carrier distributions.We show that counter-intuitively, distributions deviate more from equilibriumunder weak illumination than at high intensities. We mimic two experimentalprocedures to extract the carrier temperatures and show that they yielddifferent dependence on illumination. Finally, we provide an accurate way toevaluate photoluminescence efficiency, which, unlike conventional models,predicts correctly the experimental results. These results provide a startingpoint towards examining how non-equilibrium features will affect propertieshot-carrier based application.

Theory of Non-equilibrium "Hot" Carriers in Direct Band-gap Semiconductors Under Continuous Illumination