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Quantum anomalous Hall effects and various topological mechanisms in functionalized Sn monolayers
Author(s) -
Yuguang Mu,
Xue Yang,
Tong Zhou,
Zhongqin Yang
Publication year - 2019
Publication title -
new journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.584
H-Index - 190
ISSN - 1367-2630
DOI - 10.1088/1367-2630/ab0454
Subject(s) - monolayer , physics , magnetism , condensed matter physics , lattice (music) , quantum anomalous hall effect , topology (electrical circuits) , coupling (piping) , quantum , passivation , atom (system on chip) , coupling strength , quantum hall effect , quantum mechanics , nanotechnology , electron , layer (electronics) , materials science , mathematics , combinatorics , computer science , acoustics , metallurgy , embedded system

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