Pyroelectricity of silicon-doped hafnium oxide thin films
Author(s) -
Sven Jachalke,
Tony Schenk,
Min Hyuk Park,
Uwe Schroeder,
Thomas Mikolajick,
Hartmut Stöcker,
Erik Mehner,
Dirk C. Meyer
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5023390
Subject(s) - pyroelectricity , materials science , ferroelectricity , thin film , orthorhombic crystal system , doping , dielectric , polarization (electrochemistry) , silicon , analytical chemistry (journal) , remanence , optoelectronics , nanotechnology , crystal structure , chemistry , crystallography , magnetization , magnetic field , chromatography , physics , quantum mechanics
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