Open AccessCompact model of nanometer STT-MTJ device with scale effect
Author(s) -
Manman Wang,
Yanfeng Jiang
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/9.0000049
Subject(s) - spintronics , tunnel magnetoresistance , spin transfer torque , materials science , nanometre , scale (ratio) , magnetoresistive random access memory , junction temperature , nanoscopic scale , integrated circuit , non volatile memory , optoelectronics , electronic engineering , power (physics) , computer science , electrical engineering , nanotechnology , random access memory , condensed matter physics , engineering , physics , magnetic field , ferromagnetism , composite material , quantum mechanics , computer hardware , magnetization , layer (electronics)
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