Highly efficient p-type doping of GaN under nitrogen-rich and low-temperature conditions by plasma-assisted molecular beam epitaxy
Author(s) -
H. Tang,
Sharif Sadaf,
X. Wu,
Weihong Jiang
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5089658
Subject(s) - molecular beam epitaxy , doping , analytical chemistry (journal) , atmospheric temperature range , materials science , impurity , desorption , nitrogen , epitaxy , surface roughness , chemistry , optoelectronics , nanotechnology , layer (electronics) , physics , adsorption , meteorology , composite material , chromatography , organic chemistry
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