Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates | Zendy

Jessica Afalla | Zendy; Alexander De Los Reyes | Zendy; Valynn Katrine Mag-usara | Zendy; Lorenzo P. Lopez | Zendy; Kohji Yamamoto | Zendy; Masahiko Tani | Zendy; Armando Somintac | Zendy; Arnel Salvador | Zendy; Elmer Estacio | Zendy

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Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

Author(s) -

Jessica Afalla,

Alexander De Los Reyes,

Valynn Katrine Mag-usara,

Lorenzo P. Lopez,

Kohji Yamamoto,

Masahiko Tani,

Armando Somintac,

Arnel Salvador,

Elmer Estacio

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5004597

Subject(s) - terahertz radiation , materials science , photoluminescence , substrate (aquarium) , quenching (fluorescence) , optoelectronics , molecular beam epitaxy , gallium arsenide , epitaxy , electron , quantum well , field electron emission , optics , fluorescence , laser , nanotechnology , physics , oceanography , layer (electronics) , quantum mechanics , geology

Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but having different defect profiles. The on-axis sample had a higher defect density and more types of electron traps than the off-axis counterpart. Temperature-dependent terahertz (THz) emission and temperature-dependent photoluminescence were measured; in both cases, an intensity quenching was observed between 75 K – 250 K for the on-axis sample, but not in the off-axis sample. We attribute the THz emission quenching to the electron traps present in the sample, which decreases the photocarriers participating in setting up the surface field

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