Open AccessMemory effect near transition temperature in Sm C∗ phase in nonsurface stabilized ferroelectric liquid crystals
Author(s) -
Indrani Coondoo,
Arun Malik,
Amit Choudhary,
Ajay Kumar,
A. M. Biradar
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3000663
Subject(s) - ferroelectricity , materials science , phase transition , dielectric , hysteresis , conductivity , transition temperature , condensed matter physics , electrical resistivity and conductivity , phase (matter) , depolarization , analytical chemistry (journal) , chemistry , optoelectronics , electrical engineering , medicine , physics , superconductivity , engineering , organic chemistry , chromatography , endocrinology
Memory behavior in the ferroelectric liquid crystal (FLC) material, Felix 17/100, has been investigated by electro-optical, dielectric, and hysteresis methods at different temperatures ranging from room temperature to near ferro-paraelectric phase transition. Memory effect has been observed in the studied material near the transition temperature in Sm C∗ phase in the cells having thickness greater than the pitch value of the material. This is in contrast to the memory effect observed in conventional FLCs where thickness of the cell has to be less than the pitch value of the material. Electrical conductivity measurements elucidate that the steep increase in the conductivity near the transition temperature in Sm C∗ phase enhances the motion of free ions and probably weakens the depolarization field in the material, thereby showing memory effect.
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