Hetero‐material CPTFET with high‐frequency and linearity analysis for ultra‐low power applications

In this work, the authors have focused on increasing the current driving capability, speed of operation, suppression of parasitic capacitance and ambipolarity of the charge plasma tunnel field effect transistor (CPTFET). Gate dielectric and hetero‐material engineering are employed in the CPTFET to obtain better drain current. Introduction of high‐k dielectric increases the injection of charge carriers in the intrinsic body while a low‐energy bandgap III–V material reduces the tunnelling width leading to the increased rate of band‐to‐band tunnelling of electrons and thus, enhancing the ON‐state current of the device. Hence, the proposed device shows superior performance when operated in regime of DC and high frequency. For reducing the ambipolar conduction in the device, a widely used concept of underlapping of gate electrode is employed which reduces the leakage current in the device. Further, to determine the reliability of the device at high frequency, an analysis of linearity parameters is carried out. The proposed device is highly reliable to function at high‐frequency regime. Therefore, the overall introduction of gate dielectric engineering, hetero‐material engineering and underlapping of gate electrode improves the performance and characteristics of CPTFET.