Open AccessCoding schemes for multi‐level Flash memories that are intrinsically resistant against unknown gain and/or offset using reference symbols
Author(s) -
Immink K.A.S.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2013.3558
Subject(s) - offset (computer science) , coding gain , computer science , code word , coding (social sciences) , algorithm , flash memory , electronic engineering , decoding methods , theoretical computer science , computer hardware , mathematics , engineering , statistics , programming language
Coding schemes for storage channels, such as optical recording and non‐volatile memory (Flash), with unknown gain and offset are presented. In its simplest case, the coding schemes guarantee that a symbol with a minimum value (floor) and a symbol with a maximum (ceiling) value are always present in a codeword so that the detection system can estimate the momentary gain and the offset. The results of the computer simulations show the performance of the new coding and detection methods in the presence of additive noise.