Deepening the Valance Band Edges of NiO  x   Contacts by Alkaline Earth Metal Doping for Efficient Perovskite Photovoltaics with High Open‐Circuit Voltage | Zendy

Ge Bing | Zendy; Qiao Hong Wei | Zendy; Lin Ze Qing | Zendy; Zhou Zi Ren | Zendy; Chen Ai Ping | Zendy; Yang Shuang | Zendy; Hou Yu | Zendy; Yang Hua Gui | Zendy

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Deepening the Valance Band Edges of NiO x Contacts by Alkaline Earth Metal Doping for Efficient Perovskite Photovoltaics with High Open‐Circuit Voltage

Author(s) -

Ge Bing,

Qiao Hong Wei,

Lin Ze Qing,

Zhou Zi Ren,

Chen Ai Ping,

Yang Shuang,

Hou Yu,

Yang Hua Gui

Publication year - 2019

Publication title -

solar rrl

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.544

H-Index - 37

ISSN - 2367-198X

DOI - 10.1002/solr.201970066

Subject(s) - doping , non blocking i/o , open circuit voltage , materials science , alkaline earth metal , energy conversion efficiency , perovskite (structure) , photovoltaics , optoelectronics , conductivity , electrical resistivity and conductivity , voltage , valence band , metal , nanotechnology , electrical engineering , band gap , metallurgy , photovoltaic system , chemistry , crystallography , engineering , catalysis , biochemistry

In article no. 1900192 , Ai Ping Chen, Shuang Yang, Yu Hou, and co‐workers employ a versatile alkaline earth metals doping strategy to engineer the electronic structure of NiO x contacts for inverted planar perovskite solar cells, in which the champion device demonstrates a power conversion efficiency of 19.49% with a high open circuit voltage of 1.14 V. Alkaline earth metals doping can significantly optimize the electrical properties by deepening the valence band maximum and enhancing the hole conductivity.

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