z-logo
Premium
Negative‐Tone Block Copolymer Lithography by In Situ Surface Chemical Modification
Author(s) -
Kim Bong Hoon,
Byeon KyeongJae,
Kim Ju Young,
Kim Jinseung,
Jin Hyeong Min,
Cho JoongYeon,
Jeong SeongJun,
Shin Jonghwa,
Lee Heon,
Kim Sang Ouk
Publication year - 2014
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201400971
Subject(s) - copolymer , materials science , surface modification , polymer , lithography , covalent bond , polystyrene , methyl methacrylate , styrene , nanotechnology , self assembly , annealing (glass) , template , chemical modification , methacrylate , in situ , polymer chemistry , chemical engineering , chemistry , organic chemistry , composite material , optoelectronics , engineering
Negative‐tone block copolymer (BCP) lithography based on in situ surface chemical modification is introduced as a highly efficient, versatile self‐assembled nanopatterning. BCP blends films consisting of end‐functionalized low molecular weight poly(styrene‐ ran ‐methyl methacrylate) and polystyrene‐ block ‐Poly(methyl methacylate) can produce surface vertical BCP nanodomains on various substrates without prior surface chemical treatment. Simple oxygen plasma treatment is employed to activate surface functional group formation at various substrates, where the end‐functionalized polymers can be covalently bonded during the thermal annealing of BCP thin films. The covalently bonded brush layer mediates neutral interfacial condition for vertical BCP nanodomain alignment. This straightforward approach for high aspect ratio, vertical self‐assembled nanodomain formation facilitates single step, site‐specific BCP nanopatterning widely useful for various substrates. Moreover, this approach is compatible with directed self‐assembly approaches to produce device oriented laterally ordered nanopatterns.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here