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Study of solid/solid interface by transmitted x‐ray reflectivity
Author(s) -
Inoue Koji,
Kitahara Amane,
Matsushita Kiyohiko,
Kikkawa Hiroyuki,
Nakabayashi Fumitomo,
Ageishi Naoya,
Terauchi Hikaru,
Sakata Osami,
Takahashi Isao
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1960
Subject(s) - x ray reflectivity , scattering , materials science , transmission electron microscopy , reflectivity , surface finish , optics , semiconductor , transmission (telecommunications) , crystallography , condensed matter physics , chemistry , optoelectronics , physics , composite material , electrical engineering , engineering
In this paper, we demonstrate investigations of metal thick layer/semiconductor interfaces (Au/Si and Ga/GaAs) by x‐ray reflectivity under transmission geometry (TXR), which could not be performed by conventional x‐ray reflectivity due to the macroscopic thickness and surface roughness of the overlayers. We obtain precise electron density by using the two maxima in diffuse scattering of TXR caused by the Fresnel transmission function (the so‐called Yoneda wings). From in situ TXR measurements of Ga/GaAs with elevating temperature, the onset of structural variation at the interface is found to be 520 K. Such an interfacial variation at an extraordinarily low temperature agrees with an ex situ SEM study of an etched GaAs surface. Copyright © 2005 John Wiley & Sons, Ltd.
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