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21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment
Author(s) -
Seo Hyun-Sik,
Cao Weiran,
Xiao Jun Cheng,
Wu Yuan-Chun,
Zhao Bin,
ZHANG Xin,
Yan Xiaolin
Publication year - 2020
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.13863
Subject(s) - thin film transistor , materials science , optoelectronics , compensation (psychology) , inkwell , oled , liquid crystal display , transistor , electrical engineering , nanotechnology , engineering , voltage , layer (electronics) , psychology , psychoanalysis , composite material
We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE) structure. A 32 inch UD ink jet printing (IJP) OLED TV, oriented to 65 inch 8K4K TVs, driven by self‐aligned coplanar structure TFTs has been demonstrated adopting TFTs with transparent storage and 3.8um contact hole design. InGaSnO (IGTO) TFTs with the mobility of ~ 30 cm 2 V ‐1 s ‐1 have been deveoped for future applications such as narrow bezel OLEDs and self‐luminous mini‐LEDs/micro LEDs with internal compensation circuit.