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45.3: Invited Paper : High Performance Nanocrystalline ZnO x N y for Imaging and Display Applications
Author(s) -
Lee Eunha,
Shin Taeho,
Benayad Anass,
Lee HyungIk,
Ko DongSu,
Kim HeeGoo,
Jeon Sanghun,
Park GyeongSu
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10263
Subject(s) - nanocrystalline material , materials science , microstructure , optoelectronics , band gap , photonics , nanotechnology , range (aeronautics) , nanocrystal , engineering physics , metallurgy , physics , composite material
We present versatile ZnO x N y applicable to a wide range of imaging/display devices. A well‐optimized ZnOxNy material exhibits high mobility exceeding 100 cm 2 /Vs, bandgap of 1.3 eV and nanocrystalline microstructure with multiphase. Accordingly, the performance of ZnO x N y ‐based device can be adjustable to meet the requisite of future electronic/photonic device elements.

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