Stimulated Brillouin Scattering in Doped Centrosymmetric Semiconductors

Based upon the electromagnetic treatment, stimulated Brillouin scattering (SBS) in nearly centrosymmetric doped semiconductors is investigated analytically. The origin of the nonlinear interaction is considered to be in the third‐order optical susceptibility arising due to the nonlinearly induced current density and finite electrostriction of the medium. The threshold conditions are obtained for the onset of SBS as well as the effective Brillouin susceptibility and the resulting gain constant for both, lightly and heavily doped semiconductors. The numerical estimations are made for n‐type InSb crystals at 77 K duly shined by a pulsed 10.6 μm CO 2 laser. In highly doped n‐InSb, the gain constant is significantly enhanced under high power pulsed excitation below the damage threshold. The analysis establishes the possibility of occurrence of optical phase conjugation via SBS in doped semiconductors.