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Three‐Band Model Applied to Narrow‐Gap HgCdTe
Author(s) -
Fau C.,
Dame J. F.,
de Carvalho M.,
Calas J.,
Averous M.,
Lombos B. A.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221250246
Subject(s) - electron , band gap , conduction band , semimetal , condensed matter physics , semiconductor , acceptor , materials science , hydrostatic equilibrium , thermal conduction , chemistry , optoelectronics , physics , quantum mechanics , composite material
Hg 1– x Cd x Te, with x = 0.15 is a semimetal at low temperature (4.2 K) and becomes a narrow‐gap semiconductor at higher ones (77 K). Its transport properties are measured at different temperatures, magnetic fields, and hydrostatic pressures. Based on the measured data, an analytical three‐band model is developed to calculate the concentrations and mobilities of the resulting two types of electrons and one type of holes. The existence of the slow electrons are related to the presence of acceptor states in the conduction band, as it is already elucidated in the case of zerogap HgTe. The concordance of the calculated transport properties, based on this model, with the measured ones supports the subsistence of three types of carriers in the narrow‐gap HgCdTe.
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