Phonon Attenuation in n‐Type Semiconductors with ZB Structure in Presence of Internal Strains and Magnetic Field | Zendy

Singh Mahiradhwaj | Zendy

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Phonon Attenuation in n‐Type Semiconductors with ZB Structure in Presence of Internal Strains and Magnetic Field

Author(s) -

Singh Mahiradhwaj

Publication year - 1978

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220880134

Subject(s) - condensed matter physics , degenerate energy levels , attenuation , physics , phonon , electron , semiconductor , magnetic field , degeneracy (biology) , attenuation coefficient , type (biology) , spin (aerodynamics) , ultrasonic attenuation , atomic physics , optics , quantum mechanics , bioinformatics , biology , thermodynamics , ecology

Expressions for the attenuation coefficient of phonons by donor electrons are obtained in presence of internal strains for n‐type semiconductors with ZB structure for the situations when besides the usual spin‐orbit splitting of the six degenerate states into a quartet and a lower lying doublet, the quartet further splits into two doublets due to internal strains present in the crystal. Similarily the expression for ultrasonic attenuation is also obtained in presence of a magnetic field for the most general case when the degeneracy of both the doublets is removed. These expressions are used in explaining the magnetic dependence of ultrasonic attenuation in Ge doped n‐type InSb. Good agreement between theory and experiment is observed.

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