Premium
Metal–semiconductor transition in Sm x Mn 1− x S solid solutions
Author(s) -
Aplesnin Sergey,
Romanova Oxana,
Har'kov Anton,
Balaev Dmitrii,
Gorev Michail,
Vorotinov Alexander,
Sokolov Vladimir,
Pichugin Andrey
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147327
Subject(s) - electrical resistivity and conductivity , condensed matter physics , atmospheric temperature range , semiconductor , materials science , thermal expansion , manganese , solid solution , metal , phonon , scattering , electron , physics , thermodynamics , metallurgy , optics , optoelectronics , quantum mechanics
The electrical resistivity of the Sm x Mn 1− x S (0.15 ≤ x ≤ 0.25) solid solutions in the temperature range of 80–300 K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T = 220 K for x = 0.15 and at T = 100 K for x = 0.2 compounds. This behavior is explained from the result of the mobility‐edge movement, the disorder being due to elastic deformation and spin density fluctuations with short‐range order. Metal–semiconductor phase transition versus concentration at x c = 0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Néel temperature for Sm 0.2 Mn 0.8 S is found.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom