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Effect of SOCl 2 doping on electronic properties of single‐walled carbon nanotube thin film transistors
Author(s) -
Kim D. H.,
Lee J. K.,
Huh J. H.,
Kim Y. H.,
Kim G. T.,
Roth S.,
DettlaffWeglikowska U.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100106
Subject(s) - doping , materials science , carbon nanotube , metal , conductivity , electrical resistivity and conductivity , substrate (aquarium) , nanotechnology , chemical engineering , optoelectronics , composite material , electrical engineering , chemistry , metallurgy , oceanography , engineering , geology
We report on SOCl 2 doping of separated single‐walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl 2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p‐type transfer characteristics. After SOCl 2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p‐type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping.
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