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GaAs–MnAs nanowires
Author(s) -
Sadowski Janusz,
Siusys Aloyzas,
Kovacs Andras,
Kasama Takeshi,
DuninBorkowski Rafal E.,
Wojciechowski Tomasz,
Reszka Anna,
Kowalski Bogdan
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201001125
Subject(s) - nanowire , molecular beam epitaxy , materials science , ferromagnetism , substrate (aquarium) , scanning electron microscope , epitaxy , nanostructure , optoelectronics , ferromagnetic material properties , gallium arsenide , nanotechnology , crystallography , condensed matter physics , chemistry , layer (electronics) , magnetization , magnetic field , composite material , oceanography , physics , quantum mechanics , geology
Abstract Different strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self‐catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high temperatures on Si(100) substrates; (iii) GaAs–GaMnAs core–shell NW structures; (iv) GaAs–MnAs core–shell NW structures grown on Si(100). Structures of types (i), (iii), and (iv) exhibit ferromagnetic properties. Right: Scanning electron microscopy image of Mn doped GaAs NWs with Ga droplets at the tops, grown by MBE on oxidized Si(100) substrate in the autocatalytic growth mode.