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Paramagnetic regime in Zn 1− x Mn x GeAs 2 diluted magnetic semiconductor
Author(s) -
Kilanski L.,
Fedorchenko I. V.,
Górska M.,
Dynowska E.,
Wójcik M.,
Kowalski B. J.,
Anderson J. R.,
Rotundu C. R.,
Varnavskiy S. A.,
Dobrowolski W.,
Marenkin S. F.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201001101
Subject(s) - paramagnetism , magnetic semiconductor , magnetoresistance , condensed matter physics , magnetization , ion , semiconductor , materials science , curie–weiss law , curie temperature , analytical chemistry (journal) , magnetic field , chemistry , ferromagnetism , physics , optoelectronics , quantum mechanics , organic chemistry , chromatography
The systematic studies of both magnetic and magnetotransport properties of Zn 0.947 Mn 0.053 GeAs 2 diluted magnetic semiconductor are presented. The paramagnetic behaviour of the sample confirms that the solubility of Mn in the studied alloy is of the order of 5 at%. The Curie–Weiss behaviour of magnetic susceptibility is preserved only at low temperatures, T  < 100 K indicating the presence of short‐range magnetic interactions in the system due to the presence of groups of Mn counting few ions. The high‐field magnetization together with magnetoresistance data is used to estimate the amount of magnetic ions active in the semiconductor matrix. The obtained results showed that the amount of magnetically active Mn ions in the semiconductors matrix is two orders of magnitude lower than the value obtained from X‐ray fluorescence measurements. The magnetotransport studies revealed that only about 30% of all Mn ions are electrically active in the semiconductor matrix.

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