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Nano‐floating gate capacitor with SnO 2 quantum dots distributed in polyimide dielectrics
Author(s) -
Lee Dong Uk,
Seo Ki Bong,
Han Seung Jong,
Kim Eun Kyu,
Kim YoungHo
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880617
Subject(s) - quantum dot , materials science , optoelectronics , polyimide , dielectric , capacitance , gate dielectric , capacitor , transmission electron microscopy , nanotechnology , layer (electronics) , transistor , voltage , chemistry , electrical engineering , engineering , electrode
Abstract Self‐assembled SnO 2 quantum dots were fabricated by a chemical process between a BPDA‐PDA polyamic acid and a Sn film. A nano‐floating gate capacitor having metal–insulator–semiconductor structure has been formed on p‐type Si substrate with SnO 2 quantum dots and dielectric polymer layer. The size and density of fabricated SnO 2 quantum dot were about 15 nm and 2.4 × 10 11 cm –2 , respectively. The electrical properties of the nano‐floating gate capacitor have been investigated by measuring capacitance–voltage characteristics. Then, the flat‐band voltage shift due to charging of the electron in SnO 2 quantum dot was ranged from 1.2 V to 4 V. And the transmission electron microscopy and the optical absorption spectra have been measured to investigate the morphology and absorbance of the SnO 2 quantum dots embedded in polyimide. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)