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Photoconductivity of Anisotropically Deformed Intrinsic Germanium
Author(s) -
Romanov V. A.,
Zhadko I. P.,
Boiko I. I.
Publication year - 1966
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19660170144
Subject(s) - photoconductivity , germanium , photocurrent , electric field , materials science , optoelectronics , saturation current , saturation (graph theory) , optics , voltage , physics , silicon , quantum mechanics , mathematics , combinatorics
Abstract Theoretical and experimental investigations are made of the photoconductivity in anisotropically deformed germanium in conditions favourable to the occurrence for electrical pinch. A saturation of the photocurrent for sufficiently high electric fields is predicted and observed. The effect of the electric field on the spatial distribution of the carriers in an illuminated crystal is investigated using the infrared spot method. Similar values of the surface recombination velocities are obtained from the current‐voltage and relaxation characteristics.