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UV Photodetector Based on Vertical (Al, Ga)N Nanowires with Graphene Electrode and Si Substrate
Author(s) -
Zhou Min,
Qiu Haibing,
He Tao,
Zhang Jianya,
Yang Wenxian,
Lu Shulong,
Bian Lifeng,
Zhao Yukun
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000061
Subject(s) - photodetector , responsivity , materials science , nanowire , optoelectronics , graphene , heterojunction , electrode , substrate (aquarium) , dark current , biasing , quantum tunnelling , nanotechnology , chemistry , voltage , physics , oceanography , geology , quantum mechanics
As the key device in a UV warning system, a solid‐state UV photodetector has attracted great attention. Herein, a new UV photodetector structure based on vertical (Al, Ga)N nanowires with graphene electrode and Si substrate is designed and demonstrated. By graphene/vertical (Al, Ga)N nanowire array heterojunction, the rectifying characteristics of I – V curve are formed, and the dark current is 54 nA at −2 V bias. The fabricated device exhibits a responsivity of 0.176 mA W −1 at the bias of −2 V, as well as a stable switching characteristic. It is proposed that the photogenerated electrons and holes can reach positive and negative electrodes by diffusion or tunneling effect, even with thick AlN sections. This method can promote the implementation of low cost for UV photodetector with adjustable detection range nowadays.

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