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Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering
Author(s) -
Knutsen K. E.,
Schifano R.,
Marstein E. S.,
Svensson B. G.,
Kuznetsov A. Yu.
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228527
Subject(s) - conduction band , recombination , heterojunction , materials science , thermal conduction , optoelectronics , solar cell , band offset , offset (computer science) , energy conversion efficiency , band gap , chemistry , electron , valence band , physics , composite material , computer science , biochemistry , quantum mechanics , gene , programming language
A significant conduction band offset appearing in n‐ZnO/p‐Si heterojunction solar cells is recognized as a serious roadblock to obtain high efficiency solar cells. By alloying with Mg, the conduction band in Zn 1– x Mg x O can be raised above that of Si, so that the influence of recombination centers at the interface between the two materials is strongly reduced, enabling high efficiency despite recombination velocities as high as 10 6 cm s −1 . By simulating these phenomena we predict an optimal design of a n‐Zn 0.8 Mg 0.2 O/p‐Si solar cell resulting in high conversion efficiencies.
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