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Large‐area, catalyst‐free heteroepitaxy of InAs nanowires on Si by MOVPE
Author(s) -
Cantoro M.,
Wang G.,
Lin H. C.,
Klekachev A. V.,
Richard O.,
Bender H.,
Kim T.G.,
Clemente F.,
Adelmann C.,
van der Veen M. H.,
Brammertz G.,
Degroote S.,
Leys M.,
Caymax M.,
Heyns M. M.,
De Gendt S.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026396
Subject(s) - nanowire , metalorganic vapour phase epitaxy , materials science , epitaxy , raman spectroscopy , wafer , transmission electron microscopy , optoelectronics , transistor , nanotechnology , optics , electrical engineering , layer (electronics) , physics , engineering , voltage
Abstract In this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)‐oriented Si wafers. The NWs, grown at 620 °C by metal–organic vapor‐phase epitaxy, are vertically aligned and ∼30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back‐gated, single InAs NW field‐effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology.