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Mosaicity and stress effects on luminescence properties of GaN
Author(s) -
Toure A.,
Bchetnia A.,
Lafford T. A.,
Benzarti Z.,
Halidou I.,
Bougrioua Z.,
Jani B. El
Publication year - 2008
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200778869
Subject(s) - mosaicity , metalorganic vapour phase epitaxy , full width at half maximum , photoluminescence , materials science , chemical vapor deposition , sapphire , luminescence , diffraction , analytical chemistry (journal) , optics , x ray crystallography , epitaxy , optoelectronics , chemistry , physics , nanotechnology , laser , layer (electronics) , chromatography
High‐resolution X‐ray diffraction (HRXRD) of several GaN layers grown on Si/N treated c ‐plane sapphire substrate by metal‐organic chemical vapour phase deposition (MOCVD) were investigated. Photoluminescence (PL) measurements were carried out at 13 K. GaN mosaicity was studied at different growth stage with a thickness varying from 0.1 to 4.5 µm. Rocking curves of symmetric and asymmetric plane reflections were investigated to determine respectively the tilt and twist mosaic. Using PL spectra and HRXRD scattering a correlation were found between the intensity and the full width at half maximum (FWHM) of the bound exciton neutral donor (I 2 ) with the GaN mosaicity. The I 2 intensity increased significantly with increasing the interaction parameter ( m ) between tilt and twist mosaic, whereas the FWHM of I 2 decreased with increasing m . The evolution of the compressive stress with thickness is extracted from HRXRD and correlated with PL measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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