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Gaussian quantum dots of type II in in‐plane electric field
Author(s) -
Krasnyj J.,
Tytus M.,
Donderowicz W.,
Jacak W.,
Chuchmala A.
Publication year - 2007
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200675355
Subject(s) - exciton , quantum dot , electric field , coulomb , physics , electron , biexciton , condensed matter physics , ground state , atomic physics , quantum mechanics
The growing interest is recently focusing on QDs of type II, which contrary to type I QDs attract electrons and repulse holes (or conversely). In such QDs an electron–hole pair ( X exciton) can still be traped due to electron–hole Coulomb attraction, resulting in significantly more complex structure of excitonic states. We consider an X exciton in QD of type II defined by electrostatic focusing in a narrow quantum well, in the presence of additional external in‐plane electric field. The dependence of PL spectrum on dot size and in‐plane electric field is analysed within the Hartree approach for model planar Gaussian confinement. The exciton ground state and its energy red‐shift are found as a function of electric field and dot size. Corresponding rearrangement of PL spectrum is described. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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