Ge‐dots/Si multilayered structures fabricated by Ni‐induced lateral crystallization | Zendy

Shi Y. | Zendy; Yan B. | Zendy; Pu L. | Zendy; Zhang K. J. | Zendy; Han P. | Zendy; Zhang R. | Zendy; Zheng Y. D. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Ge‐dots/Si multilayered structures fabricated by Ni‐induced lateral crystallization

Author(s) -

Shi Y.,

Yan B.,

Pu L.,

Zhang K. J.,

Han P.,

Zhang R.,

Zheng Y. D.

Publication year - 2006

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200564503

Subject(s) - crystallization , materials science , raman spectroscopy , amorphous solid , quantum dot , layer (electronics) , chemical vapor deposition , scanning electron microscope , transmission electron microscopy , deposition (geology) , germanium , fabrication , optical microscope , crystallography , nanotechnology , optoelectronics , silicon , chemical engineering , composite material , optics , chemistry , medicine , paleontology , physics , sediment , engineering , biology , alternative medicine , pathology

We report on the fabrication of high‐quality Ge‐dots/Si multilayered structure films by metal‐induced lateral crystallization (MILC). Ge dots are self‐assembled grown on amorphous Si layer using low‐pressure chemical vapor deposition, and then low‐temperature crystallization is carried out by Ni‐based MILC processing. The micro Raman spectroscopy, optical microscopy and electron microscopy observations reveal that the crystallized Si film has large leaf‐like grains elongated along the MILC direction with (110) preference. Moreover, the strain shift of Ge dots reflects the formation of high quality interface between the crystallized Si and Ge dot. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research