Growth of Ni–B films on n‐silicon | Zendy

Mondal Anup | Zendy; Nath Sabyashachi | Zendy; Mondal Ashok | Zendy; Bandopadhyay Sikha | Zendy; Gangopadhyay Utpal | Zendy; Saha Hiranmay | Zendy

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Growth of Ni–B films on n‐silicon

Author(s) -

Mondal Anup,

Nath Sabyashachi,

Mondal Ashok,

Bandopadhyay Sikha,

Gangopadhyay Utpal,

Saha Hiranmay

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200420042

Subject(s) - silicon , ohmic contact , deposition (geology) , materials science , sodium borohydride , contact resistance , chemical engineering , sheet resistance , reducing agent , metallurgy , nanotechnology , chemistry , layer (electronics) , catalysis , organic chemistry , paleontology , sediment , engineering , biology

Electroless deposition of Ni–B films on n‐silicon has been developed, using sodium borohydride as the reducing agent. The deposition has been studied by varying the temperature, time of deposition and the concentration of the reducing agent used, keeping the pH of the solution unchanged. Sheet resistance of the deposited films were measured to confirm the growth. Preliminary studies on contact resistance between Ni–B film and n‐Si have been carried out. Results are found to be similar to contact resistance between Ni–B and p‐silicon, suggesting that ohmic contacts to n‐Si can be achieved even with Ni–B. This has been done with a view to deposit Ni simultaneously on both the front and back sides of a silicon solar cell, from the same solution. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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