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Submicron patterns in substituted polystyrene resists by focused‐ion‐beam lithography
Author(s) -
Brault R. G.,
Kubena R. L.,
Jensen J. E.
Publication year - 1983
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760231705
Subject(s) - resist , materials science , polystyrene , lithography , etching (microfabrication) , electron beam lithography , ion beam lithography , plasma etching , x ray lithography , optoelectronics , ion beam , layer (electronics) , molybdenum , beam (structure) , nanotechnology , optics , polymer , composite material , physics , metallurgy
Abstract Submicron lines in negative working, substituted polystyrene resists by focused‐ion‐beam lithography were demonstrated. These features were transferred into an underlying molybdenum layer by plasma etching using the resist as an etch mask, with the minimum continuous line having a width of 0.20 μm.