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A K‐band low phase noise and low power CMOS voltage‐controlled oscillator
Author(s) -
Tsai JengHan,
Lin YuZhe,
Kuo YinTing
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30313
Subject(s) - dbc , phase noise , voltage controlled oscillator , electrical engineering , figure of merit , materials science , cmos , microwave , inductor , offset (computer science) , voltage , inductance , optoelectronics , physics , engineering , telecommunications , computer science , programming language
ABSTRACT A K‐band differential cross‐coupled inductance‐ capacitance (LC) voltage‐controlled oscillator (VCO) is implemented in 0.18‐μm CMOS process. To accomplish high quality (Q) factor LC‐tank at K‐band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is −109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is −185.79 dBc/Hz. At low supply voltage mode of 0.65 V, the phase noise is −106.015 dBc/Hz at 1 MHz offset and the FoM is −189.76 dBc/Hz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:362–366, 2017